Figures (16)  Tables (2)

    • Figure 1. 

      Schematic structure of proposed device ITO/SnO2/CH3NH3SnI3/GaAs/Mo.

    • Figure 2. 

      Energy band-gap versus layer thickness of Perovskite solar cell.

    • Figure 3. 

      Schematic diagram of valence and conduction band of ITO/SnO2/CH3NH3SnI3/GaAs/Mo solar cell.

    • Figure 4. 

      Effect of absorber thickness on electrical parameters.

    • Figure 5. 

      Impact of ETL thickness variation on solar cell parameters.

    • Figure 6. 

      Impact of HTL thickness variation on solar cell parameters.

    • Figure 7. 

      Defect density versus electrical parameters.

    • Figure 8. 

      Graph between current density and voltage.

    • Figure 9. 

      Quantum efficiency vs wavelength.

    • Figure 10. 

      Influence of interface defect density on photovoltaic parameters.

    • Figure 11. 

      Influence of temperature on Jsc and Voc.

    • Figure 12. 

      (a) Variation in generation rate with surface depth of device. (b) Variation in recombination rate with surface depth of device.

    • Figure 13. 

      Impact of light intensity on output characteristics of the solar panel.

    • Figure 14. 

      Effect of temperature on I-V curve of the solar panel.

    • Figure 15. 

      Influence of light intensity on the output power of the solar panel.

    • Figure 16. 

      Dependance of output power on the temperature of the solar panel.

    • Material parameters SnO2
      (ETL)      		 MASnI3
      (absorber layer)      		 GaAs
      (HTL)
      X (μm) 0.044 Arbitrary 4.60 Arbitrary 0.385 Arbitrary
      Eg (eV) 3.60 1.35 1.42
      χ (eV) 4.000 4.17 4.070
      ε (relative) 9.000 6.500 12.900
      Nc (cm−3) 2.200E+18 1.000E+18 2.200E+18
      Nv (cm−3) 1.800E+19 1.000E+19 1.800E+19
      Ve (cms−1) 1.000E+7 1.000E+7 1.00E+7
      Vh (cms−1) 1.000E+7 1.000E+7 1.00E+7
      μe (cm2V−1-s1) 1.000E+2 1.600E+0 8.500E+3
      μh (cm2V−1-s1) 2.500E+1 1.600E+0 4.000E+2
      ND (cm−3) 1.000E+18 0.0 0.0
      NA (cm−3) 0.0 3.200E+15 1.000E+11
      Nt (cm−3) 1.000E+15 − 1.000E+14
      Nt (cm−3) 5.642E+15 −

      Table 1. 

      Material parameters of HTLs, absorber layer and ETL.

    • Material parameters CuI/CH3NH3SnI3
      interface      		 CuSCN/CH3NH3SnI3
      interface
      		 CH3NH3SnI3/C60
      interface
      Defect type Neutral Neutral Neutral
      Capture cross section for (n,p) (cm−2) 1 × 10−19 1 × 10−19 1 × 10−19
      Energy distribution Single Single Single
      E- level w.r.t Ev (above Ev, Ev) 0.6 0.6 0.6
      Total density (cm−3) 1 × 1013 1 × 1013 1 × 1013

      Table 2. 

      Material parameters of HTLs/ CH3NH3SnI3 interface defects and CH3NH3SnI3/ C60 interface defects.